A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. Method for pulling-in and hanging up of the flexible riser. Conductive bumps as the connecting members on the electrodes of the semiconductor chip are connected with internal portions of the respective inner leads, the internal portions being positioned inward relative to the protruded portions. A doped material is applied in the recess to fabricate the semiconducting device. This is accomplished by utilizing a bearing ring assembly slidably installed on the annular perimeter surface of the crankdisk.