The present invention is a means and method for constructing and operating a 3-D array and, more particularly, a 3-D memory array. A reaction chamber is defined by at least one side wall extending between the bottom portion and the roof portion. In an embodiment the data mask and data inversion functions for a portion of data, such as a data word, can be merged onto a common pindata line. The Web application can receive the request URL and the Web application can be executed with the instrumented source code. A first voltage may be applied to a first terminal of word line switch transistors that are coupled to blocks selected for erase. The inspection apparatus comprises means for supplying an AC signal alternately to either one of the finger pattern segments and both the finger pattern segments and the discrete patterns while maintaining the other at a ground potential, and sensors 131, 132, 133 for detecting the AC signal disposed in the edge region.