A flash memory structure having an enhanced capacitive coupling coefficient ratio may be fabricated in a self-aligned manner while using a semiconductor substrate that has an active region that is recessed within an aperture with respect to an isolation region that surrounds the active region. The apparatus for fabricating a pattern ejects a liquid material as liquid droplets from an ejecting section, and dispose the liquid droplets on a substrate in a line-shaped pattern. The apparatus also includes differential signal lines coupled to the differential pair circuits, the differential signal lines extending through the chip carrier and having first and second segments. A signal generator is configured to provide second signaling at a second frequency which is a fraction of the first frequency. Gas, such as carbon dioxide, infused through the sheath displaces an aqueous liquid from the region between the distal end portion of the sheath and the tissue.