According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide. The method and system include providing a server over a network that integrates a set of design tools, including an automated front-end software process and an automated back-end software process. Resource block control information is transmitted in a \u201cfeed-forward\u201d manner to a user end or group of UEs using channels physically mapped into scheduled resource blocks for that user or group of users. 5 to 35 parts by weight in 100 parts by weight of the total amount of polymerizable monomers. In a second embodiment, the bulkhead attaching structure comprises a step element carried by the payload, which abuts the fore bulkhead.