There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film is formed to cover the impurity regions. The connector includes a housing and a plurality of terminals held by the housing and arranged in a longitudinal direction of the housing. Diffusion intensity distribution of light released from a predetermined position of the light diffusing member contains at least two prominences with the center axis of the light interposed between the prominences.