The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies. For example, after finding feasible control flow paths for a tested method along with each path’s associated input conditions, a new program is created which tests these conditions along with the precondition. Instead of assigning a unique address code to each switch in a series of take-outs on a multi-conductor cable, each electronic switch is programmed with the same address code. The calibrator is configured to respond to a differential voltage to adjust the divided voltage such that the differential voltage is forced to zero.