Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A generally transparent lens is mounted to the reflector for enclosing the head lamp. The continuous cast-rolling is applied under each a prescribed condition of a molten liquid temperature, a roll press load, a casting speed, and a thickness of the ingot sheet. These approaches eliminate the need for a hermetically sealed lid or cover to protect hybrid electronic circuitry, and thus allow the device to be thinner than otherwise possible.