A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The UE will then measure the signal quality on the carrier frequency based on measurements using a downlink synchronization code transmitted by the node B on the downlink pilot channel of the carrier frequencies in the multicarrier network. The docking station includes a front face and a rear face and is slidably disposed between the first railing and the second railing allowing for horizontal movement along the first and second railings. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. Based on these operations the state comparator determines whether to start the DMA transfer, and the transfer unit executes data transfer between the peripheral devices.