A device structure and a method of fabricating an electrostatic discharge protection circuit on a semiconductor device. The connecting member is moveably located between the securing member and the pressing member. The input attribute and the geographic position are transmitted to a central system and associated with a zone including the geographic position at which the input attribute was collected. for a period of time in a range of 1 minute to 24 hrs, with higher temperatures associated with shorter times, in an inert atmosphere. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0. Additionally, in various exemplary embodiments, this technology provides a system and method for validating the capacity of a high voltage battery.