A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. The at least one fabrication site may be configured to receive one or more fabrication substrates, such as semiconductor substrates. The coalescing data between events prior to the temporal window may be determined by a set of overlapping operations to a data set, wherein certain operations have non-overlapping sectors which are not coalesced. A plurality of first channels are defined in the first fin unit and parallel to the heat spreaders. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode. As a result of these different paths sheets within the first and second web portions are re-sequenced in a manner suitable for processing by downstream modules, such as a right angle turn module.