A SOI MOSFET 10 may be formed from silicon single crystal as a substrate body that is formed on an embedded oxide film 11. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. The first portion and the difference are transmitted, and then the second portion is reconstructed by adding the difference to the first portion. The overlay composite may be used as a quality control tool, or in interrogating the array or processing results of the interrogation.