1459941603-9a4ab492-bfff-4462-abf0-e7222ed28a23

A gate insulating film and a gate electrode are formed on a silicon substrate. The method and system involves replacing current implementations that use ROM memory to store a copy of the embedded operating system, or critical portions thereof, with a disk-based ROM and redundant backup copies of the initial operating system kernel and the primary image required for booting the final embedded operating system. The initial position of the movable block is set as a position at an extremity of the movement of the movable block within a movable range based on an inflection point of the predetermined amount detected by the detection section when the movable block moved by the deformation of the piezoelectric element is restricted by the restriction section. The system of the invention having these features blocks, by means of the window, a gas flowing through the first waveguide section and forces that gas to flow through the gas bypass filtration system so that it enters the second waveguide section only after passing through the filter.