1459941984-00123010-1f37-4cc6-9bb5-8adbc7b0faa5

The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The honeycomb molded bodies are fired to form honeycomb fired bodies. The peripheral risk factor detection section detects peripheral risk factors in an area around the host vehicle. 01 to 2, and a contacting time ranging from 0. A field reference picture index associated with the current field macroblock is obtained, and a frame reference picture index is determined based on the field reference picture index. The semiconductor structure includes a semiconductor substrate; a first dielectric layer over the semiconductor substrate; a conductive wiring in the first dielectric layer; and a copper germanide nitride layer over the conductive wiring.