A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p\u2212-type second body region, an n-type first source region, and an n+-type second source region, and additionally has multiple pairs of trenches that constitute an IGFET cell. A processing module processor) is employed to generate FFEs that are employed to govern operation of the various data formatting modules within a formatting system within a HDD. Other apparatuses, surface mountable structures, and methods of use are described herein. The tank front stay is provided independently from a flange, is welded to a bottom surface of the fuel tank, and projects downward from the inside of the flange. In addition, methods for influencing the sag of the rolls in a deliberate way, by selecting appropriate materials, the relationships of material structures in the roll body or by means of the deliberate introduction of ballast into the central bore or else into separate peripheral bores in the roll bodies, are described.