A structure and method for fabricating a III-V compound semiconductor-containing heterostructure field-effect transistor with self-aligned and overlapped extensions using a gate last process is disclosed. The skate frame includes an elongate structural member comprised of a structural material having a first average density. At this condition, the user may carry out the driving maneuvers effortlessly. On the basis of the correlation of particular user interests profiles with picture object information, picture objects are selected and transmitted via the communications network to the respective communications terminal from which the received user identification data were transmitted. The synchronization system passes individual data pulses through two parallel synchronization sub-circuits, alternating synchronization sub-circuits for each succeeding pulse, and combines the output of the parallel synchronization sub-circuits to create a single synchronous signal.