An insulating gate type semiconductor device has a plurality of trench gate electrodes provided substantially in parallel. Capacitors are connected between specific conducive paths in said communication connector. A liftable cover is screwed into the top of a container tube. In this way, quantitative meaningful values for specific surface-related characteristics with a nanometer resolution may be obtained. Having bond pads on the die adapter eliminates the need to break and remake the electrical connections to the original bond pads on the die during burn-in testing of the die. The feedback device for generating a second feedback signal corresponding to the differentiated output signal of the quantifier, comprises a switching device coupled capacitively to the integration capacitor, by means of which device corresponding charge portions are transmitted to the integration capacitor when there is a variation in the digital output signal.