A semiconductor device includes a metal-oxide-semiconductor field effect transistor, in which parasitic silicon controlled rectifier equivalent circuits are formed in the MOSFET, and the MOSFET further includes a drain region. Each item is associated with a number of attributes and each attribute is associated with a set of values. First and second connector components extend above and below a flange of the three-phase connector with their respective exposed upper and lower ends offset in different planes than the exposed upper and lower ends of the third connector component.