A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. The first modulation and the second modulation are different from each other. After the outer coding, the resulting data block sequence is sent to the MBMS MSs. A transparent insert is positioned in the opening and is secured to at least one of the box and a portion of the gate, The portion of the gate, which may include a connector assembly, will be visible to a consumer when the packaged gate system is stacked edgewise together with like packaged gate systems on the bottom surface with the side surface facing the consumer. The resist mask has edges that lie on top of the patterned metal layer.