1459948960-30740315-edb7-451c-a498-0b575d5aec77

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The write enhancement circuitry is formed on the head carrier as ladder network blocks. However, the nipping pressure of each of the opposite end star wheels, nipping angular portions of the medium on the leading edge side is set high enough to rectify such deformation at the angular portions. These two components interact with one another to enable inputoutput operations to be performed on the backup image. Each of the paddles comprises a body having a first planar portion having a leading edge and a second planar portion connected at a first angle to the first paddle portion.