A transistor-type ferroelectric nonvolatile memory element having an MFMIS structure that can be highly densely integrated. The control unit divides the first nozzle row and the second nozzle row into N nozzle groups when the dot forming operation is performed. At logic-content level the database is organized according to the hierarchical tree-type structure wherein the items that can be purchased are the leaf nodes of the tree and the groups of items are the intermediate nodes of the tree placed at different hierarchical levels that are higher than the hierarchical level of the leaf nodes. The present invention also relates to an absorbent member comprising a superabsorbent polymer and pulp fiber. The first guided mode resonance grating can redirect the reflected incident optical beam out of the second side of the substrate.