According to an embodiment of the present invention, a system optimizes an information processing environment, and comprises at least one processor. The method features depositing a silicon oxide layer via PECVD procedures, without RF bias, using a high silane to oxygen ratio, resulting in a silicon rich, silicon oxide layer, located surrounding the STI region. Sequential welding data is written into the RAM 1d and can be rewritten. The devices switch between two different flow control types supported by the different line cards, while listening for the polling messages. Two sets of address registers are used to store the starting and the end address for programming.