A transparent base having a GaN semiconductor light-emitting device fixed thereon with a transparent adhesive is fitted to lead frames by flip chip bonding in such a manner that the light from the device is emitted outside through the substrate of the device, the adhesive, the base, and a sealing resin in this order. Initially, a portion of a charge trapping dielectric layer is formed over a substrate and a resist is formed over the portion of the charge trapping dielectric layer. The luminous molecules 3G and the charge transport material 3F are high in concentration at a side close to the cathode 4 and low in concentration at a side close to the anode 2 in a layer thickness direction of the emission region 3.