A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon substrate. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The FIR filter attenuates high-frequency quantization error in a digital control signal that the plurality of DACs converts to an analog control signal for the VCO. The DUT may tune to a given radio channel on the test signal.