The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. A source of lock mass ions adjacent the ion optics creates lock mass ions within the ion optics. The method selects, for each one of the plurality of model blocks, a reference mode dependent upon a mode of the corresponding model block, generates a background reference image comprising the plurality of selected reference blocks, and then aligns the input frame with the background model, based on the background reference image. The glass substrates exhibit high resistance to thermal shock, a high transparency over a broad spectral range in the visible and ultra violet ranges and the glass being configured to be free of bubbles, knots, inclusions, streaks, and surface undulations, which glass substrates are made from alkali-free aluminoborosilicate glasses.