The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. In one embodiment, the clock generator is not localized in one particular location on the semiconductor die and then distributed, but instead the clock generation itself is distributed throughout the integrated circuit. Once the ECO changes have been implemented, those violations caused by interaction between the changes and the metal fill are repaired afterwards. The number of such circuits can be programmably modified so that the slew rate output of the driver circuit can be programmably changed. The present invention discloses methods which utilize a modified ECC algorithm, and a flash memory device which incorporates these methods.