Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. In accordance with the present invention, an adjustable ski skin attachment device includes two threaded members, a coupler, and a cover. This assures that the volume of water in the inlet pipe is always less than that in the discharge pulse, thus assuring that a steady, constant flow of liquid flows into the inlet opening to assure a uniform inertial flow of the floating contaminants into the inlet.