A method for plasmonic structure manufacture and for protecting a plasmonic nanostructure during annealing is provided. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing the change in the gate voltage of the junction FET. The second cleaning material may be oriented in a different plane than the first cleaning material, allowing differently oriented surfaces to be cleaned. The system further analyzes the log file to identify the user-initiated log file record having a timestamp value between the first and second timestamp values. Light exiting from the second end portion is transmitted to an optical sensor by an exit light-collecting section. The gear body and the gear portion are the same size.