The present subject matter relates to phenylurea capreomycin derivatives, and to metabolites and pharmaceutically acceptable salts and solvates thereof. When an ordinary photomask is to be replaced with a resist mask, in setting a planar size of a shielding pattern formed by resist film, a correction quantity L is subtracted from a planar size of a corresponding shielding pattern formed of metal. An etching process is performed to form a plurality of semiconductor fins on the semiconductor substrate.