Semiconductor structures, quantum cascade structures and lasers including the structures are provided. A system for realizing an automatic protection switching of a transmission device is also provided. Because all of the silicon substrate, metal substrate and glass substrate are durable against high-temperature annealing for crystallizing a high-dielectric-constant material, large-capacity passive elements can be formed on the substrate which serves as an interposer or on the re-wiring of the chips to be mounted.