In the method of producing bipolar transistor structures in a semiconductor process, an advanced epitaxial trisilane process can be used without the risk of poly stringers being formed. The apparatus, on the basis of an exchange command signal, detaches a sample block attached to a cutting base and attaches a new sample block to the cutting base. Bandwidth within the power-line communication network is preferably dynamically allocated to device streams by a server in response to predetermined and event-driven priorities.