The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The gate is separated from the semiconductor substrate by a gate insulating layer. Bias circuits are then configured so that the internal logic of the digital device will operate over the desired clock oscillator frequency range. The GRE packet generator generates a GRE packet with each of segments from the fragmentation unit. Downstream of the supply and prior to folding a splice detector is responsive to the presence of a supply splice in the web and the control of the process is arranged to mark for rejection any package wherein the number of detected supply splices contained therein is greater than a predetermined number. For each of S0, S1, S2 and S3, multipliers of the fourth multiplication circuit are a4, a8, a12, a16.