The maximum allowable number of voltage programming pulses to program memory elements of a non-volatile memory device is adjusted to account for changes in the memory elements which occur over time. min is applied to seal two glass substrates together. Moreover, the application of the reverse bias is performed by varying only the counter electrode, and thus withstand voltage of TFT and the increase of the electric power consumption due to the increase of voltage of the gate signal line drive circuit, which becomes a problem when changing greatly the electric current supplying line, can be suppressed.