The present invention detects the occurrence of a bottleneck on the basis of the states of respective elements of the storage system and presents a measure for eliminating the bottleneck before actually changing the constitution of the storage system. A TSV is formed through a semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature. An arcuate portion of the first copper foil is placed in apposition with a first side of an aluminum member, an adhesive substance being situated between the first copper foil and the first side of the aluminum member. The user then places the catheter within the article of jewelry and secures the catheter using the fasteners. Wherein the unique power distribution architecture is possible by the formation of a plurality of ink vias in the heater chip which provides for an increase in the chip surface area available for electrical connectivity.