A static memory cell comprising a pair of cross-coupled inverters which is \u201cshadowed\u201d with non-volatile memory elements so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. A memory layer sequence, especially a charge-trapping layer sequence with a dielectric memory layer between dielectric confinement layers, is provided at least in regions adjacent to the bitline conductor tracks. A pulsed bias RF signal is provided. The output unit is coupled to the electric field sensing unit for providing an output signal containing information relating to the magnitude and frequency of the modulation which occurs in the first component. The vapor source is preferably a pure solvent or a solvent mixture in which no solute is dissolved. The hydrostatic couple comprises, at least one hydrodynamic fluid-imbibing polymer, and at least one hydrostatic pressure modulating agent.