The present invention realizes strengthening of a ground of a lower-surface ground electrode of an upper semiconductor chip and miniaturization in a semiconductor module on which two semiconductor chips are mounted in a stacked manner. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. For rendering, a portion of processing or memorizing resources of said input-output device is allocated such that remaining resources of said input-output device are sufficient for maintaining the input-output capability of the device.