In a preferred embodiment, the invention provides a circuit and method for improving the soft error rate in a dual-port read SRAM cell. The apparatus includes a rotary member and a surface compensating member that is fixedly coupled to the rotary member in a rotational direction and slidably coupled to the rotary member in an axial direction. The BJT current source may limit a gate-to-source voltage of the two MOSFETs to a predetermined voltage that is less than a maximum allowed voltage by controlling a current flow through the first resistor to prevent damage to the MOSFETs.