To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. In a first step, electro-deposited photoresist is applied to a fully copper plated PCB including the \u2018plated through holes\u2019 to protect the outer layers and the \u2018plated through holes\u2019 from copper etchant solution. In this case, the host device is a power source and the cable is used to provide power from the power source to the electronic device. The preferred attachment system requires no clearance in the bottom of the socket well because neither the extension member nor the latch mechanism is located between the distal end of the residual limbliner and the bottom of the well. A catheter includes a hypotube including interspersed patterns of longitudinally spaced rows of kerfs.