A method for forming a polysilicon FinFET or other thin film transistor structure includes forming an insulative layer over a semiconductor substrate. A primary winding of the inductive rotary coupler is fed by the inverter via a line, with energy transmitted by the inductive rotary coupler being supplied to a load through a secondary winding. A second end of the lift arm is coupled to the patient support. The latter is applicable to correcting existing stereoscopic content. The elongated rod has a first position where the elongated rod has a predetermined axial position relative to the polymer coating layer and a second position where the elongated rod has a displaced axial position relative to the first position.