A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. The wall has a midline and also has an inner sidewall and an outer sidewall. New systems that can be used to decompose dioxins in incineration ash were constructed using this MZ-340 strain. The connector body at the distal end includes at least one boss adjacent the lower surface of the lower component. The third core layer is joined to the second core layer by a butt-joint method.