Certain embodiments of the invention may include a self-securing container to the back of a pickup truck. The SOI transistor having a source and a drain having a body disposed therebetween, the source being implanted with germanium to form an area of silicon-germanium adjacent a sourcebody junction in a lower portion of the source, the area of silicon-germanium in the source forming a hereto junction along a lower portion of the sourcebody junction. The heater works to elevate the temperature of the gas sensor element up to a given value required to bring the gas sensor element into an activated condition. Mating is achieved with a simple insertion of the mating connector.