A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The transporter includes a support platform for supporting a load, the loaded support platform defining fore-aft and lateral planes and characterized by a load distribution. The clamp permits particularly safe, minimally invasive percutaneous interventions, especially in the area of the spinal column. In one embodiment, at least one of the two lateral walls comprises an access port. An aperture is provided near the upper end to access the cavity for trash deposit having an appended ledge for butt snuffing and perforations in the sidewall for tying the repository to a support post. The second member is moveable with respect to the first member and the second member has a contact portion for engagement with the implant at a second position, spaced from the first position.