A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. The device is intended to increase production rates for film without reducing the level of film gauge control. The at least one wall comprise a multitude of thin conductive wires densely arranged close to each other in the substrate and having respective short ends connected to the top and bottom layers. The microprocessor output signal is provided to an electronic display.