Episulfide compounds useful as starting materials of optical materials are stably stored for a long period of time at a temperature ranging from their solidifying points to 20\xb0 C. A first right side wall fold line is provided in the right side wall, and a first left side wall fold line is provided in the left side wall. The establishment of a reverse tunnel may be automatically triggered after a forward tunnel is established, and a bidirectional tunnel is established. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3\xd710\u22123cm in an energy range of 1. An output node of the third amplifier circuit forms the amplifier output of the amplifier arrangement. In one example, the gate electrode of an MOS ESD device extends locally between each pair of strips to segment the drain and source regions.