Disclosed is a method for an energy-efficient improvement in the production of sulfur hexafluoride, and eliminates the generation of other byproducts. Using nitrogen implantation or plasma annealing, a low work function W TaSixNyGOxSi gate stack is formed in the NMOS regions while a high work function W Ta5Si3GOxSi gate stack is formed in the PMOS regions. Furthermore, there are provided mechanical means for changing the linkage between the end seat plates and the mount, which result in increasing, remaining the same or decreasing the spring constant. Further, at least the longitudinal axes of the parallel metal wire fingers within two different metal layers are not parallel to each other within the same capacitor segment. The valve is adapted to selectively allow air into and out of the air bladder.