A semiconductor memory device and a method for manufacturing the same are disclosed, which reduce parasitic capacitance generated between a storage node contact and a bit line of a high-integration semiconductor device. The solid material may include an admixture of a metal and a metal halide in the form of spheres of high purity, uniform size and uniform composition. The organic vapor is ejected through a nozzle block onto a cooled substrate, to form a patterned organic film. An additional multiplexer allows the output of the flip-flop in one logic element to be connected to the input of a flip-flop in a different logic element within the same LAB.