A method for fabricating a stress enhanced CMOS circuit includes forming a first plurality of MOS transistors at a first pitch and forming a second plurality of MOS transistors at a second pitch. Rotation of the camshaft by a handle or lever moves the plunger between an extended position, where its serrated outer end frictionally engages an interior surface of the channel for the closure, and a retracted position without frictional engagement. The screen of transparent material has one or more areas or portions formed therein which areas or portions may be made to be translucent upon the application of a stimulus.