The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted, stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In at least some embodiments, the mechanism can include a housing that is mountable to a support structure. The high-intensity light enters the skin tissue and generates a Raman or fluorescence signal. Accordingly, although the hydrogen storage alloy electrode contains a little or no Co, it is possible to obtain an electrode having little deterioration due to pulverization of the alloy and a high capacity.