The present invention relates to Rifaximin amorphous forms, to their use in medicinal preparations and to therapeutic methods using them. An embedded dielectric cap is formed over a top surface of the metallization line, wherein the embedded dielectric cap has a sufficient thickness so as to separate a top surface of the liner material from a hardmask layer formed over the low-k dielectric material. A front wall of the housing has an opening providing access to the outlet and a window that provides access to electrical contacts associated with a memory device containing information relating to the contents of the cartridge. Before this SOI substrate is manufactured, heat treatment is performed on the semiconductor wafer at 1100\xb0 C.