A method of growing highly planar, fully transparent and specular m-plane gallium nitride films. A gate electrode of a p-type MIS transistor includes a conductive coating film, which is formed in contact with the gate insulation film and has a Fermi level on a valence band side from a substantial center of the band gap of the semiconductor substrate, and the second metal-containing film formed on the conductive coating film and having a lower resistance than the conductive coating film. A first component decoder which is coupled to the first adder, receives first parity symbols and decodes the information symbols using first parity symbols and an output signal of the first adder. Heat generated from the heat generating component is radiated by means of the heat sink. The fence slats of the present invention also utilize a pair of longitudinal fins having a unique angled configuration that substantially fills the fence channel.