The present invention intends to provide a method with a relatively uncomplicated mechanism, for assessing irradiation intensity of a laser beam, whereby an operator can accurately assess irradiation intensity of the laser beam, and to provide an apparatus used through this method. The semiconductor memory device includes a semiconductor substrate including a first active region and a second active region, a gate electrode including a silicide layer formed on the first active region and a resistor pattern formed on the second active region. A magnetic field that is formed when the first switching element is turned on and that penetrates through the first loop circuit and a magnetic field that is formed when the first switching element is turned off after it is turned on and that penetrates through the second loop circuit have the same direction. A catalytic material, such as platinum, is disposed on at least one of the second surfaces and is operative to ignite the fuel as it reaches the second surface. The power contacts on the upper surface of the base engage a daughterboard so that the die is able to receive power from a voltage source mounted on the daughterboard through the power contacts on the upper surface of the base. In the event that data cannot be delivered to the second communications unit, an item of information concerning a non-deliverability of the sent data is provided in the transmission status message.